深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

N-MOSFET

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HYG037N03LQ1C2 30 85 4.5 57.7 20 1~3 3589 79 single - N PDFN8L(5x6)
HY1603B 30 62 5.5 36 20 1~3 1623 28 single - N TO-263-2L
HYG045N03LA1C2 30 78 3.6 52 20 1~3 2130 47.7 single - N PDFN8L(5x6)
HYG045N03LA1D 30 80 4.5 57 20 1~3 2156 47 single - N TO-252-2L
HY1603U 30 62 5.5 36 20 1~3 2082 52 single - N TO-251-3L
HY1603D 30 62 5.5 36 20 1~3 2082 52 single - N TO-252-2L
HY1603P 30 62 5.5 36 20 1~3 1623 28 single - N TO-220FB-3L
HY1603C2 30 60 5 35.7 20 1~3 2312 52 single - N PDFN8L(5x6)
HY1603V 30 62 5.5 36 20 1~3 2082 52 single - N TO-251-3S
HY1503C1 30 34 8.5 17.8 20 1~3 680 14.6 single - N DFN8L(0303)
HY1403D 30 42 11 30 20 1~3 1012 29 single - N TO-252-2L
HY1303C 30 30 5.2 3.1 20 1.0~2.5 2351 46 single - N DFN8L(0303)
HYG082N03LR1C1 30 32 9 21.4 20 1~3 787 14.8 single - N DFN8L(0303)
HY1103S 30 11 11 2.5 20 1~3 1050 29 single - N SOP8L
HYG082N03LR1S 30 11 10.5 2.5 20 1~3 787 14.8 single - N SOP8L
HYG080N03LA1S 30 12 9.5 2.5 20 1~3 680 14.6 single - N SOP8L
HYG035N02KA1C2 20 95 N/A 57.5 12 0.3~1.0 4082 47.5 single - N PDFN8L(5x6)
HYG110N03LR1S 30 10 11.5 2.5 20 1~3 731 14.9 single - N SOP8L
HYG055N02KA1D 20 90 N/A 88 10 0.4~1.0 2280 27.7 single - N TO-252-2L
HY0320 20 4.5 N/A 1.25 10 0.4~1.0 328 5.3 single - N SOT23-3L