深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

N-MOSFET

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HYG070N04LA1S 40 14.5 8 3 20 1~3 1248 25.7 single - N SOP8L
HY1904S 40 19 6 3.6 20 1~3 2164 51.5 single - N SOP8L
HY1404S 40 12 16.5 2.8 20 1~3 1155 25.7 single - N SOP8L
HY4903P 30 290 2 214 20 1~3 11506 247 single - N TO-220FB-3L
HY4903B 30 290 2 214 20 1~3 11506 247 single - N TO-263-2L
HY4903B6 30 314 1.7 268 20 1~3 9417 269 single - N TO-263-6L
HYG010N03LR1B 30 320 1 320 20 1~3 9452 240 single - N TO-263-2L
HY4703B 30 275 1.7 166 20 1~3 9946 240 single - N TO-263-2L
HY4703P 30 275 1.7 166 20 1~3 9946 240 single - N TO-220FB-3L
HYG014N03LS1C2 30 200 1.5 113 +20/-12 1~3 5661 69.9 single - N PDFN8L(5x6)
HY3503B 30 150 3.5 150 20 1~3 4900 100 single - N TO-263-2L
HY3503C2 30 150 2.5 156 20 1~3 4900 100 single - N PDFN8L(5x6)
HYG015N03LR1C2 30 145 1.5 62.5 20 1~3 4710 93 single - N PDFN8L(5x6)
HYG013N03LS1C2 30 150 1.6 65 20 1~3 3011 44.7 single - N PDFN8L(5x6)
HY3403P 30 140 2.8 115 20 1~3 4726 120 single - N TO-220FB-3L
HY3403B 30 140 2.8 115 20 1~3 4726 120 single - N TO-263-2L
HYG023N03LR1C2 30 125 2 62.5 20 1~3 4710 93 single - N PDFN8L(5x6)
HY3203C2 30 120 2.4 52 20 1~3 4726 120 single - N PDFN8L(5x6)
HY3403D 30 100 3 60 20 1~3 4726 120 single - N TO-252-2L
HYG024N03LR1B 30 160 2.6 125 20 1~3 3992 89.8 single - N TO-263-2L
HYG024N03LR1D 30 100 2.8 57 20 1~3 3918 86.8 single - N TO-252-2L
HYG023N03LR1D 30 110 2.6 62.5 20 1~3 4710 93 single - N TO-252-2L
HY3003D 30 100 3.4 68 20 1~3 2570 54 single - N TO-252-2L
HY3003P 30 100 3.5 78 20 1~3 2570 54 single - N TO-220FB-3L
HYG037N03LQ1D 30 85 4.5 57.7 20 1~3 3589 79 single - N TO-252-2L