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N-MOSFET
P-MOSFET
Dual-P
Dual-N
Half Bridge
(N+P)-MOSFET
Part
Vds Min (V)
ID (A)
RDS(on) (mΩ)
PD (W)
Vgs (±V)
Vth (V)
Ciss (pF)
Qg (nC)
Configuration
Package
HYG070N04LA1S
40
14.5
8
3
20
1~3
1248
25.7
single - N
SOP8L
HY1904S
40
19
6
3.6
20
1~3
2164
51.5
single - N
SOP8L
HY1404S
40
12
16.5
2.8
20
1~3
1155
25.7
single - N
SOP8L
HY4903P
30
290
2
214
20
1~3
11506
247
single - N
TO-220FB-3L
HY4903B
30
290
2
214
20
1~3
11506
247
single - N
TO-263-2L
HY4903B6
30
314
1.7
268
20
1~3
9417
269
single - N
TO-263-6L
HYG010N03LR1B
30
320
1
320
20
1~3
9452
240
single - N
TO-263-2L
HY4703B
30
275
1.7
166
20
1~3
9946
240
single - N
TO-263-2L
HY4703P
30
275
1.7
166
20
1~3
9946
240
single - N
TO-220FB-3L
HYG014N03LS1C2
30
200
1.5
113
+20/-12
1~3
5661
69.9
single - N
PDFN8L(5x6)
HY3503B
30
150
3.5
150
20
1~3
4900
100
single - N
TO-263-2L
HY3503C2
30
150
2.5
156
20
1~3
4900
100
single - N
PDFN8L(5x6)
HYG015N03LR1C2
30
145
1.5
62.5
20
1~3
4710
93
single - N
PDFN8L(5x6)
HYG013N03LS1C2
30
150
1.6
65
20
1~3
3011
44.7
single - N
PDFN8L(5x6)
HY3403P
30
140
2.8
115
20
1~3
4726
120
single - N
TO-220FB-3L
HY3403B
30
140
2.8
115
20
1~3
4726
120
single - N
TO-263-2L
HYG023N03LR1C2
30
125
2
62.5
20
1~3
4710
93
single - N
PDFN8L(5x6)
HY3203C2
30
120
2.4
52
20
1~3
4726
120
single - N
PDFN8L(5x6)
HY3403D
30
100
3
60
20
1~3
4726
120
single - N
TO-252-2L
HYG024N03LR1B
30
160
2.6
125
20
1~3
3992
89.8
single - N
TO-263-2L
HYG024N03LR1D
30
100
2.8
57
20
1~3
3918
86.8
single - N
TO-252-2L
HYG023N03LR1D
30
110
2.6
62.5
20
1~3
4710
93
single - N
TO-252-2L
HY3003D
30
100
3.4
68
20
1~3
2570
54
single - N
TO-252-2L
HY3003P
30
100
3.5
78
20
1~3
2570
54
single - N
TO-220FB-3L
HYG037N03LQ1D
30
85
4.5
57.7
20
1~3
3589
79
single - N
TO-252-2L
说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
220
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