深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

N-MOSFET

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HY3404P 45 150 3.6 187.5 20 1~3 5129 102 single - N TO-220FB-3L
HYG013N04NA1B6 40 354 1.3 326 20 2~4 12097 265 single - N TO-263-6L
HY5204W 40 320 1.6 348 20 2~4 8655 231 single - N TO-247A-3L
HY4504B6 40 322 2 375 20 2~4 7966 208 single - N TO-263-6L
HY4504W 40 250 2.4 336 20 2~4 7276 197 single - N TO-247A-3L
HY4504P 40 250 3 288 20 2~4 6985 195 single - N TO-220FB-3L
HY4504B 40 250 3 288 20 2~4 6985 195 single - N TO-263-2L
HYG020N04NA1B 40 220 2.1 200 20 2~4 5755 134.2 single - N TO-263-2L
HYG025N04NA1D 40 125 3 93 20 2~4 5625 122.6 single - N TO-252-2L
HY4004W 40 208 3 268 20 2~4 5700 158 single - N TO-247A-3L
HY4004B6 40 240 2.5 288 20 2~4 5700 158 single - N TO-263-6L
HY4004P 40 208 3.2 217 20 2~4 5712 158 single - N TO-220FB-3L
HY4004B 40 208 3.2 217 20 2~4 5712 158 single - N TO-263-2L
HY3704B 40 176 3.6 192 20 2~4 4427 122 single - N TO-263-2L
HYG025N04NA1C2 40 190 1.8 130 20 2~4 5744 122.2 single - N PDFN8L(5x6)
HY1804P 40 110 4.5 125 20 1~3 4175 86 single - N TO-220FB-3L
HYG017N04LS1C2 40 135 2.1 75 20 1~3 4332 66.1 single - N PDFN8L(5x6)
HY3704P 40 176 3.6 192 20 2~4 4427 122 single - N TO-220FB-3L
HYG035N04LR1C2 40 100 2.9 57 20 1~3 5905 107.1 single - N PDFN8L(5x6)
HY1904B 40 90 6 100 25 1~3 2274 52 single - N TO-263-2L
HY1804D 40 80 5 62.5 20 1~3 4280 90 single - N TO-252-2L
HY1904P 40 90 6 100 25 1~3 2274 52 single - N TO-220FB-3L
HY1804U 40 80 5 62.5 20 1~3 4280 90 single - N TO-251-3L
HY1904D 40 72 6 62.5 20 1~3 2164 51.5 single - N TO-252-2L
HY1904C2 40 65 6 48 20 1~3 2391 56.5 single - N PDFN8L(5x6)