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心率传感器
TWS光感
上海维安
低电容TVS
功率TVS
半导体放电管
集成电路保护器
共模滤波器
陶瓷气体放电气
压敏电阻
陶瓷ESD抑制器
N-MOSFET
P-MOSFET
Dual-P
Dual-N
Half Bridge
(N+P)-MOSFET
Part
Vds Min (V)
ID (A)
RDS(on) (mΩ)
PD (W)
Vgs (±V)
Vth (V)
Ciss (pF)
Qg (nC)
Configuration
Package
HYG035N10NS2P
100
180
4
220
20
2~4
7270
115
single - N
TO-220FB-3L
HY3410P
100
140
7.5
285
25
2~4
6140
130
single - N
TO-220FB-3L
HYG037N10LS1B
100
150
4.2
176.5
20
1.2~2.5
6070
110
single - N
TO-263-2L
HY3410NA2P
100
140
7
288
20
2~4
6835
133
single - N
TO-220FB-3L
HYG042N10NS1P
100
160
4.2
200
20
2~4
7040
119
single - N
TO-220FB-3L
HYG042N10NS1B
100
160
4.2
200
20
2~4
7040
119
single - N
TO-263-2L
HY3410B
100
140
7.5
285
25
2~4
6140
130
single - N
TO-263-2L
HYG050N10NS1P
100
135
5.2
189.8
20
2~4
6359
100
single - N
TO-220FB-3L
HYG045N10NS1P
100
160
4.5
250
20
2~4
7877
177
single - N
TO-220FB-3L
HY3210P
100
120
8.5
237
25
2~4
4922
120
single - N
TO-220FB-3L
HY3210B
100
120
8.5
237
25
2~4
4922
120
single - N
TO-263-2L
HY3010P
100
100
12
192
25
2~4
3100
76
single - N
TO-220FB-3L
HY3010B
100
100
12
192
25
2~4
3100
76
single - N
TO-263-2L
HYG072N10LS1C2
100
80
7.5
75
+20/-12
1~3
2980
56
single - N
PDFN8L(5x6)
HYG072N10LS1P
100
80
8
104
+20/-12
1~3
3070
54.3
single - N
TO-220FB-3L
HY1710B
100
70
18
150
25
2~4
4200
94
single - N
TO-263-2L
HY1710P
100
70
18
150
25
2~4
4200
94
single - N
TO-220FB-3L
HY1710MF
100
70
18
150
25
2~4
4200
94
single - N
TO-220MF-3L
HYG092N10LS1C2
100
60
9.6
62.5
20
1~3
2348
47
single - N
PDFN8L(5x6)
HY3010D
100
60
12
65
25
2~4
3197
81
single - N
TO-252-2L
HYG101N10LA1D
100
15
100
51.7
20
1~3
1072
26
single - N
TO-252-2L
HY1710D
100
44
18.5
75
25
2~4
4200
94
single - N
TO-252-2L
HYG072N10LS1S
100
14
8.6
5.4
+20/-12
1~3
2900
57
single - N
SOP8L
HY0910D
100
9
143
21
20
1~3
720
11
single - N
TO-252-2L
HYG130N10LS1S
100
11.5
13.4
3
20
1~3
1674
28.9
single - N
SOP8L
说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
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