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N-MOSFET
P-MOSFET
Dual-P
Dual-N
Half Bridge
(N+P)-MOSFET
Part
Vds Min (V)
ID (A)
RDS(on) (mΩ)
PD (W)
Vgs (±V)
Vth (V)
Ciss (pF)
Qg (nC)
Configuration
Package
HYG200P10LR1B
-100
-80
28
214
20
-1~-3
11520
181
single - P
TO-263-2L
HYG400P10LR1P
-100
-40
58
100
20
-1~-3
5402
79
single - P
TO-220FB-3L
HYG400P10LR1B
-100
-40
58
100
20
-1~-3
5402
79
single - P
TO-263-2L
HYG200P10LR1P
-100
-80
28
214
20
-1~-3
11520
181
single - P
TO-220FB-3L
HYG400P10LR1D
-100
-40
55
100
20
-1~-3
5003
83
single - P
TO-252-2L
HY10P10U
-100
-10
225
31.3
20
-1~-3
1034
30
single - P
TO-251-3L
HY10P10D
-100
-10
225
31.3
20
-1~-3
1034
30
single - P
TO-252-2L
HYG800P10LR1D
-100
-20
98
75
20
-1~-3
3273
42.6
single - P
TO-252-2L
HYG800P10LR1S
-100
-8
87
5.4
20
-1~-3
3307
53.4
single - P
SOP8L
HY06P10S
-100
-6
215
2.5
20
-1~-3
900
28
single - P
SOP8L
HYG086P06LA1B
-60
-85
9
208
20
-1~-3
9202
169
single - P
TO-263-2L
HYG045P06LA1B
-60
-160
5
250
20
-1~-2.5
16993
319
single - P
TO-263-2L
HYG210P06LQ1D
-60
-40
25
60
20
-1~-3
3679
90
single - P
TO-252-2L
HYG120P06LR1D
-60
-55
16
75
20
-1~-3
4882
91.5
single - P
TO-252-2L
HYG210P06LQ1C2
-60
-40
25
60
20
-1~-3
3679
90
single - P
PDFN8L(5x6)
HYG110P04LQ1D
-40
-50
12
57.7
20
-1~-3
3938
90
single - P
TO-252-2L
HYG060P04LQ1D
-40
-70
7.5
65
20
-1~-3
6774
128
single - P
TO-252-2L
HYG110P04LQ1C2
-40
-50
12
57.7
20
-1~-3
3938
90
single - P
PDFN8L(5x6)
HYG065P03LQ1D
-30
-70
7.5
57.7
20
-1~-3
3595
86
single - P
TO-252-2L
HYG045P03LQ1D
-30
-90
5.5
60
20
-1~-3
6750
135.5
single - P
TO-252-2L
HY15P03C2
-30
-60
6
52
20
-1~-3
4287
90
single - P
PDFN8L(5x6)
HYG065P03LQ1C2
-30
-70
7.5
57.7
20
-1~-3
3598
86
single - P
PDFN8L(5x6)
HYG045P03LQ1C2
-30
-80
5
62.5
20
-1~-3
7660
131.3
single - P
PDFN8L(5x6)
HY12P03C2
-30
-50
11.5
42
20
-1~-3
2814
34
single - P
PDFN8L(5x6)
HY12P03C1
-30
-30
12.5
23
20
-1~-3
2078
52.9
single - P
DFN8L(0303)
说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
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