深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

N-MOSFET

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HY3906B 60 190 4 220 25 2~4 5726 135 single - N TO-263-2L
HY3306B 60 130 6.8 230 25 2~4 3142 68 single - N TO-263-2L
HY3606B 60 162 4.5 230 25 2~4 4376 130 single - N TO-263-2L
HY1906B 60 120 7.5 188 25 2~4 4577 96 single - N TO-263-2L
HY3306P 60 130 6.8 230 25 2~4 3142 68 single - N TO-220FB-3L
HY1906P 60 120 7.5 188 25 2~4 4577 96 single - N TO-220FB-3L
HY3006C2 60 80 5 57.7 25 2~4 4620 102 single - N PDFN8L(5x6)
HY1906C2 60 70 6.5 57.7 25 2~4 4620 102 single - N PDFN8L(5x6)
HY1906D 60 70 7 62.5 25 2~4 4600 104 single - N TO-252-2L
HY1606B 60 66 12.5 88 25 2~4 2068 51 single - N TO-263-2L
HYG052N06LS1D 60 67 6.6 60 20 1~3 1638 28.7 single - N TO-252-2L
HY1606P 60 66 12.5 88 25 2~4 2068 51 single - N TO-220FB-3L
HY1606D 60 66 12.5 64 25 2~4 2040 51 single - N TO-252-2L
HYG025N06LS1C2 60 170 2.5 130 20 1~3 3915 59.5 single - N PDFN8L(5x6)
HYG090N06LS1C2 60 60 9.2 62.5 20 1~3 926 18.5 single - N PDFN8L(5x6)
HY1506B 60 55 13.5 100 25 1~3 3522 62 single - N TO-263-2L
HY1506D 60 55 13.5 100 25 1~3 3522 62 single - N TO-252-2L
HY1506U 60 55 13.5 100 25 1~3 3522 62 single - N TO-251-3L
HY1506P 60 55 13.5 100 25 1~3 3522 62 single - N TO-220FB-3L
HY1506C2 60 48 13 48 20 1~3 2286 52.6 single - N PDFN8L(5x6)
HY1106S 60 11 15 3.5 20 1~3 2286 52.5 single - N SOP8L
HYG090N06LS1S 60 12 10.3 3 20 1~3 961 19.8 single - N SOP8L
HYG420N06LR1D 60 22 42 37.5 20 1.0~2.5 843 16 single - N TO-252-2L
HY2N7002E 60 0.2 2900 0.263 20 1.0~2.5 14 0.3 single - N SOT23-3L
HY3404D 45 147 3.6 156 20 1~3 5129 144.5 single - N TO-252-2L