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N-MOSFET
P-MOSFET
Dual-P
Dual-N
Half Bridge
(N+P)-MOSFET
Part
Vds Min (V)
ID (A)
RDS(on) (mΩ)
PD (W)
Vgs (±V)
Vth (V)
Ciss (pF)
Qg (nC)
Configuration
Package
HYG065N07NS1D
70
70
6.5
62.5
20
2~4
29.8
52
single - N
TO-252-2L
HYG065N07NS1P
70
100
6.5
125
20
2~4
2990
52
single - N
TO-220FB-3L
HY1707PM
70
80
7
178
25
2~4
4550
88
single - N
TO-3PM-3S
HY1001P
70
80
8.5
115
20
2~4
4170
79
single - N
TO-220FB-3L
HY1001D
70
70
8.6
75
20
2~4
4200
82
single - N
TO-252-2L
HY1707P
70
80
7
178
25
2~4
4550
88
single - N
TO-220FB-3L
HY1707M
70
80
7
178
25
2~4
4550
88
single - N
TO-220FB-3S
HY1707D
70
70
7.5
86
25
2~4
4600
92
single - N
TO-252-2L
HY1607PM
68
80
7.8
115
25
2~4
3203
84
single - N
TO-3PM-3S
HY1607PL
68
80
7.8
115
25
2~4
3203
84
single - N
TO-3PM-3L
HY1607B
68
80
7.8
115
25
2~4
3203
84
single - N
TO-263-2L
HYG035N06LS1C2
65
90
3.5
56
+20/-12
1~3
3687
76
single - N
PDFN8L(5x6)
HYG067N07NQ1P
68
80
7.5
136
20
2~4
7193
115
single - N
TO-220FB-3L
HY1607P
68
80
7.8
115
25
2~4
3203
84
single - N
TO-220FB-3L
HYG035N06LS1D
65
150
4
183
+20/-12
1~3
3687
76.3
single - N
TO-252-2L
HY1607D
68
70
8.5
75
25
2~4
3200
84
single - N
TO-252-2L
HY030N06C2
65
100
2.8
48
+20/-12
1~3
5270
96
single - N
PDFN8L(5x6)
HYG018N06LS1C2
65
140
2
68.1
20
1.2~2.5
4624
104
single - N
PDFN8L(5x6)
HY030N06P
65
140
2.8
113.6
+20/-12
1~2.5
5270
96
single - N
TO-220FB-3L
HY4306B6
60
290
2.2
375
25
2~4
8017
213
single - N
TO-263-6L
HY3906W
60
190
3.5
283
25
2~4
5903
136
single - N
TO-247A-3L
HY4306B
60
230
3
258
25
2~4
7219
171
single - N
TO-263-2L
HY4306W
60
230
2.8
326
25
2~4
7406
171
single - N
TO-247A-3L
HY3606P
60
162
4.5
214
25
2~4
4376
130
single - N
TO-220FB-3L
HY3906P
60
190
4
220
25
2~4
5726
135
single - N
TO-220FB-3L
说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
220
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