深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

N-MOSFET

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HYG050N08NS1B 80 130 5 187.5 20 2~4 4280 68 single - N TO-263-2L
HYG050N08NS1P 80 130 5 187.5 20 2~4 4280 68 single - N TO-220FB-3L
HYG064N08NA1B 80 120 7.5 208 25 2~4 3080 65 single - N TO-263-2L
HYG064N08NA1P 80 120 7.5 208 25 2~4 3080 65 single - N TO-220FB-3L
HY3208B 80 120 8.5 226 25 2~4 2900 70 single - N TO-263-2L
HY3208PM 80 120 8.5 226 25 2~4 2900 70 single - N TO-3PM-3S
HY3208M 80 120 8.5 226 25 2~4 2900 70 single - N TO-220FB-3S
HY3208P 80 120 8.5 226 25 2~4 2900 70 single - N TO-220FB-3L
HY3208PL 80 120 8.5 226 25 2~4 2900 70 single - N TO-3PM-3L
HYG035N08LS1C2 80 100 3.5 62.5 +20/-12 1.2~2.5 5080 108 single - N PDFN8L(5x6)
HYG050N08NS1C2 80 100 5 93.7 20 2~4 4280 68 single - N PDFN8L(5x6)
HYG055N08NS1P 80 120 6.8 187.5 20 2~4 3660 60 single - N TO-220FB-3L
HYG072N08NR1P 80 100 7.9 188 25 2~4 2770 68 single - N TO-220FB-3L
HY3008PL 80 100 8.5 200 25 2~4 3150 67 single - N TO-3PM-3L
HY3008B 80 100 8.5 200 25 2~4 3150 67 single - N TO-263-2L
HY3008PM 80 100 8.5 200 25 2~4 3150 67 single - N TO-3PM-3S
HY8290P 80 94 8.5 150 25 2~4 5000 96 single - N TO-220FB-3L
HY3008P 80 100 8.5 200 25 2~4 3150 67 single - N TO-220FB-3L
HY1908MF 80 90 8.5 185 25 2~4 3800 86 single - N TO-220MF-3L
HY1908B 80 90 8.5 185 25 2~4 3800 86 single - N TO-263-2L
HY1908P 80 90 8.5 185 25 2~4 3800 86 single - N TO-220FB-3L
HY1908D 80 90 9 64 25 2~4 3864 84 single - N TO-252-2L
HYG055N08NS1C2 80 85 6 83.3 20 2~4 3660 60 single - N PDFN8L(5x6)
HY3007P 70 120 7 200 25 2~4 3050 76 single - N TO-220FB-3L
HYG065N07NS1B 70 100 6.5 125 20 2~4 2990 52 single - N TO-263-2L

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