深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

N-MOSFET

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HY1920W 200 90 25 375 20 2~4 5871 130 single - N TO-247A-3L
HY1920P 200 90 25 375 20 2~4 5871 130 single - N TO-220FB-3L
HY1720P 200 64 32 263 20 3~5 5057 101 single - N TO-220FB-3L
HY1720W 200 64 32 263 20 3~5 4816 102 single - N TO-247A-3L
HYG065N15NS1B 150 165 7.5 375 20 2~4 6646 96 single - N TO-262-3L
HY1420P 200 36 68 180 20 3~5 2444 53 single - N TO-220FB-3L
HYG065N15NS1P 150 165 7.5 375 20 2~4 6646 96 single - N TO-220FB-3L
HY3215I 150 120 15 300 25 3~5 5785 137 single - N TO-262-3L
HY3215PM 150 120 15 300 25 3~5 5785 137 single - N TO-3PM-3S
HY3215W 150 130 14 349 25 3~5 5925 135 single - N TO-247A-3L
HY3215P 150 120 15 300 25 3~5 5785 137 single - N TO-220FB-3L
HY3215B 150 120 15 300 25 3~5 5785 137 single - N TO-263-2L
HY1515P 150 50 34 180 20 3~5 2447 56 single - N TO-220FB-3L
HY1915P 150 85 18 263 20 3~5 5125 103 single - N TO-220FB-3L
HYG050N13NS1B 135 200 5 375 20 2~4 11687 165 single - N TO-263-2L
HYG050N13NS1B6 135 225 4.5 405 20 2~4 11687 165 single - N TO-263-6L
HYG400N15NS1P 150 40 41 115 20 2~4 2140 30 single - N TO-220FB-3L
HY3312B 125 130 9 278 25 2~4 5896 130 single - N TO-263-2L
HYG050N13NS1P 135 200 5 375 20 2~4 11687 165 single - N TO-220FB-3L
HY3312P 125 130 9 278 25 2~4 5896 130 single - N TO-220FB-3L
HY3912W 125 190 7.5 349 25 2~4 7348 185 single - N TO-247A-3L
HY5012W 125 300 3.6 500 25 2~4 16305 352 single - N TO-247A-3L
HY3712B 125 170 7.5 339 25 2~4 8162 189 single - N TO-263-2L
HY3712P 125 170 7.5 339 25 2~4 8162 189 single - N TO-220FB-3L
HY5110W 100 316 2.5 500 25 2~4 16465 356 single - N TO-247A-3L

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